The individual subband densities and mobilities in delta -doped GaAs at different temperatures

Autor:	D I Lubyshev, V P Migal, S A Studenikin, I A Panaev
Rok vydání:	1993
Předmět:	Delta Condensed matter physics Chemistry Doping Materials Chemistry Electron Electrical and Electronic Engineering Conductivity Condensed Matter Physics Electronic Optical and Magnetic Materials
Zdroj:	Semiconductor Science and Technology. 8:1822-1828
ISSN:	1361-6641 0268-1242
DOI:	10.1088/0268-1242/8/10/006
Popis:	The transport properties of delta -GaAs (Si) at high temperatures were studied using the 'mobility spectrum' technique. Strong changes in the subband occupancies were observed in a low-doped sample (ND=1.5*1012 cm-2) as the temperature increased from 77 K to 300 K while in a high-doped sample (ND=5.0*1012 cm-2) these changes were small. For an explanation of the observed behaviour with temperature Poisson's and Schrodinger's equations were solved self-consistently. The mobility of the lowest subband (i=0) was found to be relatively independent of temperature while the mobilities of the higher subbands (i>0) decreased with increasing temperature in both low- and high-doped samples. At close to room temperature, the conductivity of the delta -structures can be described well by a two-carrier model where the first group consists of the electrons of all the higher subbands having approximately equal mobilities.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7bc55c2d4ccd44634b1d4b8a31b1a837 https://doi.org/10.1088/0268-1242/8/10/006 Zobrazit plný text záznamu