1.5 µm GaInAs/AlGaInAs Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes Grown by Organometallic Chemical Vapor Deposition

Autor:	Bhadresh Pathak, T. P. Lee, Nicholas C. Andreadakis, M.A. Koza, C. Caneau, Chung-En Zah, Akihiko Kasukawa, Rajaram Bhat
Rok vydání:	1992
Předmět:	Materials science Laser diode business.industry General Engineering General Physics and Astronomy Heterojunction Chemical vapor deposition law.invention Condensed Matter::Materials Science law Optoelectronics Quantum efficiency Quantum well laser business Current density Quantum well Diode
Zdroj:	Japanese Journal of Applied Physics. 31:1365
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.31.1365
Popis:	Very low threshold current densities of 640 A/cm2, 400 A/cm2 and 200 A/cm2 were obtained in 1.5 µm GaInAs/AlGaInAs lattice matched, compressive and tensile strained-layer quantum well laser diodes (SL-QW LDs) respectively, grown by organometallic chemical vapor deposition, with continuously graded-index separate-confinement-heterostructure. The polarization of output power for a tensile SL-QW LD showed transverse magnetic (TM) mode, while that for a lattice matched and a compressive SL-QW LDs showed transverse electric (TE) mode. A very low threshold current of 3.6 mA was obtained in a buried heterostructure compressive SL-QW laser diode grown by two-step organometallic chemical vapor deposition.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7bc42e3176044c7c040da8cb19611de3 https://doi.org/10.1143/jjap.31.1365 Zobrazit plný text záznamu