Effects of piezoelectric field, bias and indium fluctuations on a InGaN–GaN single quantum well system
| Autor: | D. Oriato, Alison B. Walker |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Physics
Field (physics) Condensed matter physics chemistry.chemical_element Biasing Condensed Matter Physics Electronic Optical and Magnetic Materials Schrödinger equation symbols.namesake chemistry symbols Electrical and Electronic Engineering Poisson's equation Wave function Electronic band structure Indium Quantum well |
| Zdroj: | Physica B: Condensed Matter. 314:59-62 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/s0921-4526(01)01371-0 |
| Popis: | A drift-diffusion model and a self-consistent solution of Poisson and Schrodinger equations have been used to obtain the band profile, the energy levels and the wave functions of an InGaN quantum well. The piezoelectric field has been shown to influence the emission energy. Published experimental results match our calculations on bias dependency. However, discrepancies between the magnitude of the calculated and measured average fields in the well are found. We show that indium fluctuations affect the field inside the well and the emission energy. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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