Degradation of uncooled electron-pumped gallium arsenide lasers

Autor: E M Krasavina, I V Kryukova
Rok vydání: 1979
Předmět:
Zdroj: Soviet Journal of Quantum Electronics. 9:656-657
ISSN: 0049-1748
DOI: 10.1070/qe1979v009n05abeh009088
Popis: An investigation was made of the degradation of electron-pumped gallium arsenide lasers operating at room temperature. One of the reasons for the degradation of these uncooled lasers was (in contrast to the cooled devices) an increase in the density of dislocations in the active region of a crystal because of the greater plasticity at higher temperatures.
Databáze: OpenAIRE