Autor: |
E M Krasavina, I V Kryukova |
Rok vydání: |
1979 |
Předmět: |
|
Zdroj: |
Soviet Journal of Quantum Electronics. 9:656-657 |
ISSN: |
0049-1748 |
DOI: |
10.1070/qe1979v009n05abeh009088 |
Popis: |
An investigation was made of the degradation of electron-pumped gallium arsenide lasers operating at room temperature. One of the reasons for the degradation of these uncooled lasers was (in contrast to the cooled devices) an increase in the density of dislocations in the active region of a crystal because of the greater plasticity at higher temperatures. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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