Film edge emitters: the basis for a new vacuum transistor
| Autor: | H.F. Gray, J.L. Shaw, P. Bauhahn, A.I. Akinwande |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Microwave amplifiers
Materials science business.industry Quantitative Biology::Tissues and Organs Field emitter array Transistor Edge (geometry) law.invention Condensed Matter::Soft Condensed Matter Condensed Matter::Materials Science Field electron emission law Condensed Matter::Superconductivity Physics::Accelerator Physics Optoelectronics business Microwave Common emitter Diode |
| Zdroj: | International Electron Devices Meeting 1991 [Technical Digest]. |
| DOI: | 10.1109/iedm.1991.235467 |
| Popis: | The authors have designed a novel thin-film edge emitter FEA (field emitter array) and report the first low-voltage field emission results from the thin-film edge emitter. The emitter is part of a thin-film diode structure which has a submicron spacing between emitter and collector; the emitter film thickness is less than 500 AA. This thin-film FEA is directed towards low-power microwave and millimeter-wave amplification. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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