Thermal conductivity measurement of diamond and β-Ga2O3 thin films by a 3ω method
| Autor: | Naoki Okamoto, Shinichiro Suzuki, Yusuke Akutsu, Hitoshi Umezawa, Yoshiaki Mokuno, Takeyasu Saito, Shinya Ohmagari |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Single crystal diamond Band gap Diamond 02 engineering and technology Substrate (electronics) engineering.material 021001 nanoscience & nanotechnology 01 natural sciences Polycrystalline diamond Thermal conductivity measurement Thermal conductivity 0103 physical sciences engineering Optoelectronics Thin film 0210 nano-technology business |
| Zdroj: | 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference (ICEP-IAAC). |
| Popis: | Ga 2 O 3 , is one of the promising candidates as wide bandgap material, having potential advantage over SiC and GaN. The low thermal conductivity of Ga 2 O 3 is a major drawback, however, there are not much reports for thermal conductivity measurement for Ga 2 O 3 thin films. In this study, the thermal conductivity of a single-crystal and polycrystalline diamond and a single-crystal β-Ga 2 O 3 [−201] free-standing substrate was evaluated by the 3ω method. 23.3, 1810, and 1380 W/m-K, were obtained as thermal conductivity of β-Ga 2 O 3 [−201], Ila-type single crystal diamond, and polycrystalline diamond, respectively. |
| Databáze: | OpenAIRE |
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