Self-Heating Effects in 3-D Vertical-NAND (V-NAND) Flash Memory

Autor:	Dae-Hwan Yun, Jun-Young Park, Gyeong-Jun Yun, Seong-Yeon Kim, Yang-Kyu Choi
Rok vydání:	2020
Předmět:	Physics Hardware_MEMORYSTRUCTURES Nand flash memory business.industry Logic gate Electrical engineering NAND gate Solid modeling Electrical and Electronic Engineering Self heating business Electronic Optical and Magnetic Materials Communication channel
Zdroj:	IEEE Transactions on Electron Devices. 67:5505-5510
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2020.3033503
Popis:	Self-heating effects (SHEs) were investigated through simulations for 3-D V- NAND flash memory. The SHEs are varied by adjusting the thickness of the poly-crystalline channel, the number of stacked cells along with a bitline, and the configuration of the multilevel cell. The simulation data show that the temperature change was smaller than 3 K under read operation; therefore, SHEs are no longer a concern for advances in 3-D V- NAND flash memory technology. In addition, we investigated whether SHEs are influenced by a thermally isolated channel, as in a novel architecture named peripheral-under-cell (PUC), which is a peripheral circuit under cell for 3-D V- NAND flash memory.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7b8f96f3cbe30dcdc83c870be2af5ae0 https://doi.org/10.1109/ted.2020.3033503 Zobrazit plný text záznamu