Inhomogeneous Schottky barriers at Ag/Si(111) and Ag/Si(100) interfaces
| Autor: | William R. Graham, R. Pérez‐Sandoz, H. H. Weitering, Raymond T. Tung, R. J. Carolissen, J. P. Sullivan |
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| Rok vydání: | 1996 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 79:7820-7829 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.362390 |
| Popis: | We have measured current–voltage and capacitance–voltage characteristics of epitaxial Si(111)7×7–Ag, Si(111)(√3×√3)R30°–Ag, Si(100)2×1–Ag, and polycrystalline Ag/Si interfaces, using different doping levels for both n‐ and p‐type silicon wafers. Our data strongly suggest that the Schottky barrier heights (SBHs) are spatially nonuniform. The distribution of local effective SBHs at the epitaxial interfaces is modeled by a summation of a single Gaussian, representing the spread in SBH for the majority of the contact, and two half‐Gaussians which represent the high‐ and low‐barrier tails of the full distribution. Despite the fact that the average SBHs of the epitaxial interfaces are hardly structure dependent, the SBH distributions are very broad and markedly different for each interface. The polycrystalline interfaces are characterized by a narrower SBH distribution centered at a substantially smaller mean. We argue that the electrical inhomogeneity is related to structural inhomogeneity at the interface whi... |
| Databáze: | OpenAIRE |
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