Low frequency noise physical analysis for the improvement of the spectral purity of GaAs FETs oscillators
| Autor: | J.F. Sautereau, K. Tantrarongroj, J. Graffeuil |
|---|---|
| Rok vydání: | 1982 |
| Předmět: |
Physics
Noise temperature business.industry Noise spectral density Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Noise figure Noise (electronics) Electronic Optical and Magnetic Materials Burst noise Noise generator Phase noise Materials Chemistry Optoelectronics Flicker noise Electrical and Electronic Engineering business |
| Zdroj: | Solid-State Electronics. 25:367-374 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(82)90121-6 |
| Popis: | Low frequency (L.F.) noise in GaAs FETs was investigated both theoretically and experimentally. The main contribution to the overall noise at frequencies over 103 Hz was found to be flicker noise generated in the gradual region of the channel. A new simple relationship is proposed to derive the noise voltage intensity referred back to the input at normal operating conditions: it is reported that this noise spectral intensity does not depend on bias voltages for micrometer or submicrometer devices. This relationship provides a fast and easy way for assessing devices for their L.F. noise: an improvement in the spectral purity of GaAs FETs oscillators designed with low L.F. noise FETs is reported. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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