Thermal annealing effect on the properties of GaBiAs

Autor: Ramūnas Adomavičius, Anton Koroliov, Vaidas Pačebutas, Arūnas Krotkus, Renata Butkutė, B. Čechavičius
Rok vydání: 2012
Předmět:
Zdroj: physica status solidi c. 9:1614-1616
ISSN: 1610-1642
1862-6351
Popis: The influence of thermal annealing on optical properties and carrier lifetime of dilute GaBixAs1-x layers was investigated. Thick (0.5-1.5 μm) relaxed and thin (30-100 nm) strained bismide layers were grown onto semi-insulating (100)-oriented GaAs substrates by molecular beam epitaxy (MBE) using As4 and As2, respectively. The post-growth annealing was carried out in the rapid thermal annealing (RTA) oven at the temperatures ranging from 550 °C to 750 °C under nitrogen atmosphere. The high resolution X-ray diffraction (HRXRD), photoluminescence (PL) and optical pump-THz probe measurements revealed two different GaBixAs1-x anneal mechanisms. The annealing at temperatures higher than 600 °C caused a significant reduction of carrier lifetime of relaxed bismide layers with x > 0.05. Meanwhile, thick layers with a smaller content of Bi (x < 0.05) and thin strained layers annealed up to 600 °C still exhibited long carrier lifetimes. On the other hand, the significant photoluminescence signal increase at room and liquid nitrogen temperatures was observed for the GaBiAs layers grown using As2 (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze: OpenAIRE
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