Optical and compositional properties of indium nitride grown by plasma assisted molecular beam epitaxy
| Autor: | Roger J. Reeves, Andreas Markwitz, P. A. Anderson, S. M. Durbin, V. J. Kennedy, R. J. Kinsey, Chito E. Kendrick |
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| Rok vydání: | 2005 |
| Předmět: |
Ion beam analysis
Indium nitride Materials science business.industry Band gap Condensed Matter Physics Atomic and Molecular Physics and Optics chemistry.chemical_compound Optics chemistry Mechanics of Materials Signal Processing Sapphire Optoelectronics General Materials Science Crystallite Electrical and Electronic Engineering business Absorption (electromagnetic radiation) Luminescence Civil and Structural Engineering Molecular beam epitaxy |
| Zdroj: | Smart Materials and Structures. 15:S87-S91 |
| ISSN: | 1361-665X 0964-1726 |
| DOI: | 10.1088/0964-1726/15/1/014 |
| Popis: | Single-crystalline and polycrystalline indium nitride films have been grown on (0001) sapphire and silica glass using plasma assisted molecular beam epitaxy (PAMBE). Optical measurements on the films revealed a luminescence feature in the vicinity of 0.8 eV for all films, both on sapphire and glass. No feature around 1.9 eV could be identified above the background noise. To our knowledge this is the first report of polycrystalline InN exhibiting the 0.8 eV feature. Ion beam analysis of the material could find no measurable oxygen contamination in the bulk of the films. These results, along with recent reports of blue shifting of the absorption onset of InN films with increasing oxygen content, appear to point towards oxygen contamination as being the source of the previously reported higher bandgap. |
| Databáze: | OpenAIRE |
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