Low-temperature photoluminescence in holmium-doped silicon

Autor:	D. I. Kuritsin, E. O. Parshin, Boris A. Andreev, Yu. A. Nikolaev, M.I. Makovijchuk, Nikolai A. Sobolev
Rok vydání:	1999
Předmět:	Photoluminescence Materials science Silicon Doping chemistry.chemical_element Atmospheric temperature range Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Ion chemistry Excited state Atomic physics Holmium Ground state
Zdroj:	Semiconductors. 33:407-409
ISSN:	1090-6479 1063-7826
DOI:	10.1134/1.1187703
Popis:	In this paper the photoluminescence (PL) of holmium-doped silicon is discussed. The silicon was first implanted with holmium ions at energies of 1–2 MeV and doses of 1×1013–3×1014 cm−2, and then annealed at temperatures of 620–900 °C for 0.5–1 h. In order to increase the concentration of electrically and optically active centers, the silicon was implanted a second time with oxygen ions at energies of 0.14–0.29 MeV and doses of 1×1014–3×1015 cm−2. Several photoluminescence lines, which are attributable to the transitions of electrons from the first excited state of the Ho3+ ion (5I7) to the ground state (5I8), were observed. The amplitudes of the most intense lines, which correspond to transitions at frequencies 5119 and 5103 cm−1, decreased by more than an order of magnitude in the temperature range 4.2−78 K. The PL intensity of the holmium ions increased with increasing concentrations of the implanted rare-earth ions and oxygen.
Databáze:	OpenAIRE
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