| Autor: |
Jung-Yeal Lee, H.K. Cho, Gye Mo Yang, Seong Ran Jeon |
| Rok vydání: |
2001 |
| Předmět: |
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| Zdroj: |
Journal of Crystal Growth. 233:667-672 |
| ISSN: |
0022-0248 |
| DOI: |
10.1016/s0022-0248(01)01627-x |
| Popis: |
Structural properties of Si and Mg doped and undoped Al 0.13 Ga 0.87 N layers grown on sapphire substrates by metalorganic chemical vapor deposition were studied using high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy. For both low SiH 4 and low Cp 2 Mg flow rates, the full width at half maximum values of rocking curve and total threading dislocation density in Al 0.13 Ga 0.87 N layers rapidly decrease due to the increased island size by surfactant effect. The origin of the broadening of HRXRD rocking curve in Al 0.13 Ga 0.87 N layers with high SiH 4 and Cp 2 Mg flow rates results from the increase of total threading dislocation density and stacking fault density, respectively. Beside, it was observed that while for Si doping the lattice constant c is decreased continuously with the SiH 4 flow rate, the lattice constant c of Mg doped AlGaN layers is rapidly increased with a Cp 2 Mg flow rate of 3.172 μmol/min. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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