In situ Surface Passivation of Gallium Nitride for Metal–Organic Chemical Vapor Deposition of High-Permittivity Gate Dielectric
| Autor: | Xinke Liu, Yee-Chia Yeo, Leng-Seow Tan, Hock-Chun Chin |
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| Rok vydání: | 2011 |
| Předmět: |
Permittivity
Materials science Passivation Gate dielectric Analytical chemistry Gallium nitride Chemical vapor deposition Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Tantalum nitride Electronic engineering Metalorganic vapour phase epitaxy Electrical and Electronic Engineering High-κ dielectric |
| Zdroj: | IEEE Transactions on Electron Devices. 58:95-102 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2010.2084410 |
| Popis: | We report the demonstration of novel techniques for surface passivation of gallium nitride (GaN), comprising the steps of in situ vacuum anneal (VA) and silane-ammonia (SiH4 + NH3) or silane (SiH4) treatment for GaN, prior to the formation of high-permittivity gate dielectric in a multichamber metal-organic chemical vapor deposition tool. The effects of VA temperature and the SiH4 + NH3 or SiH4 treatment temperature on interface quality was investigated. High-temperature capacitance-voltage characterization was also performed to probe the interface states near the midgap of GaN. Interface state density Dit as a function of energy was extracted. Without in situ passivation, a control TaN/HfAlO/GaN capacitor has a midgap Dit of ~2.0 × 1012 cm-2 · eV-1. This is reduced to ~4.0 × 1011 cm-2 · eV-1 and ~2.0 × 1010 cm-2 · eV-1 for samples that received the in situ SiH4 + NH3 treatment and in situ SiH4 treatment, respectively. |
| Databáze: | OpenAIRE |
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