Variation-Aware Comparative Study of 10-nm GAA Versus FinFET 6-T SRAM Performance and Yield
| Autor: | Tsu Jae King Liu, Yi Bo Liao, Peng Zheng, Meng-Hsueh Chiang, Nattapol Damrongplasit |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Yield (engineering) business.industry Transistor Gate length Hardware_PERFORMANCEANDRELIABILITY Electronic Optical and Magnetic Materials law.invention Hardware_GENERAL law MOSFET Hardware_INTEGRATEDCIRCUITS Electronic engineering Optoelectronics Static random-access memory Electrical and Electronic Engineering Operating voltage business Hardware_LOGICDESIGN |
| Zdroj: | IEEE Transactions on Electron Devices. 61:3949-3954 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2014.2360351 |
| Popis: | This paper benchmarks the performance of gate-all-around (GAA) MOSFETs against that of optimized silicon-on-insulator FinFETs at 10-nm gate length. Variability in transistor performance due to systematic and random variations is estimated with the aid of TCAD 3-D device simulations, for both device structures. The yield of six-transistor SRAM cells implemented with these advanced MOSFET structures is then investigated via a calibrated physically based compact model. The GAA MOSFET technology is projected to provide for 0.1 V lower minimum cell operating voltage with reduced cell area. |
| Databáze: | OpenAIRE |
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