Optimized in situ rinsing for HF last processes

Autor:	J. Oshinowo, Marc Meuris, I. Cornelissen, A. Kubelbeck, K. Wolke
Rok vydání:	2002
Předmět:	Chemical process In situ Materials science Analytical chemistry chemistry.chemical_element Laser law.invention Hafnium chemistry.chemical_compound Hydrofluoric acid Chemical engineering chemistry law Etching (microfabrication) Silicon carbide Wafer
Zdroj:	1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023).
DOI:	10.1109/issm.1997.664633
Popis:	In order to optimize HF last processing in situ rinsing is frequently discussed to avoid the transition through the air liquid interface. In this work a special tank design for high efficient rinsing post HF wafer treatment was designed, characterized by laser interferometric flow measurements and verified by studies on the etch characteristics of thermal oxide wafers in diluted hydrofluoric acid. An in situ rinse process featuring only 45 seconds of process time and less than 15 gal/batch Di water consumption at uniformities comparable to sequential processing is presented and discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7b348fc1117767ecb00f3abe742e1f3f https://doi.org/10.1109/issm.1997.664633 Zobrazit plný text záznamu