Optimization of two-dimensional collector doping profiles for submicron BiCMOS technologies
| Autor: | R.C. Taft, C.D. Gunderson, James D. Hayden |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Materials science
business.industry Bipolar junction transistor Open collector Doping Electrical engineering Hardware_PERFORMANCEANDRELIABILITY BiCMOS Ion implantation Hardware_INTEGRATEDCIRCUITS Optoelectronics ComputerSystemsOrganization_SPECIAL-PURPOSEANDAPPLICATION-BASEDSYSTEMS Bicmos integrated circuits business Hardware_LOGICDESIGN Doping profile |
| Zdroj: | International Electron Devices Meeting 1991 [Technical Digest]. |
| DOI: | 10.1109/iedm.1991.235287 |
| Popis: | The authors demonstrate that the optimal 2-D collector doping profile for BiCMOS technologies is a strong function of the intended circuit application of the BJT (bipolar junction transistor). The 2-D collector doping profile in this study was tailored by selectively implanting the collector (SIC) into only the intrinsic region of the BJT. A controlled comparison between SIC and conventional collector implant devices was made by keeping BV/sub CEO/ and beta invariant. It is concluded that selectively implanting the collector into the intrinsic area is advantageous for low-current, but detrimental for high-current gates. > |
| Databáze: | OpenAIRE |
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