In Quest of the 'Next Switch': Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor
| Autor: | Paul M. Solomon, Thomas N. Theis |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Engineering
business.industry Transistor Electrical engineering Dissipation law.invention Nanoelectronics law Low-power electronics Hardware_INTEGRATEDCIRCUITS Key (cryptography) Electronic engineering Field-effect transistor Electronics Electrical and Electronic Engineering business Low voltage Hardware_LOGICDESIGN |
| Zdroj: | Proceedings of the IEEE. 98:2005-2014 |
| ISSN: | 1558-2256 0018-9219 |
| Popis: | Reduced power dissipation relative to the field-effect transistor (FET) is a key attribute that should be possessed by any device that has a chance of supplanting the FET as the ubiquitous building block for complex digital logic. We outline the possible physical approaches to achieving this attribute, and illustrate these approaches by citing current exploratory device research. We assess the value of the key exploratory research objectives of the semiconductor industry-sponsored Nanoelectronics Research Initiative (NRI) in the light of this pressing need to reduce dissipation in future digital logic devices. |
| Databáze: | OpenAIRE |
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