| Autor: | C. C. Tsuei, James A. Misewich, Jonathan Z. Sun, W. M. Donath, Ayush Gupta, R. J. von Gutfeld, A. G. Schrott, Brent A. Scott, Dennis M. Newns, T. Doderer, B.M. Grossman, P.C. Pattnaik |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Materials science
Condensed matter physics Mott insulator Field effect Hardware_PERFORMANCEANDRELIABILITY Condensed Matter Physics Electronic Optical and Magnetic Materials Mott transition Switching time Computer Science::Emerging Technologies Mechanics of Materials Gate oxide Hardware_INTEGRATEDCIRCUITS Materials Chemistry Ceramics and Composites Field-effect transistor Electrical and Electronic Engineering Metal–insulator transition Nanodevice Hardware_LOGICDESIGN |
| Zdroj: | Journal of Electroceramics. 4:339-344 |
| ISSN: | 1385-3449 |
| DOI: | 10.1023/a:1009914609532 |
| Popis: | A field effect transistor device (FET), consisting of a nonlinear Mott Insulator channel material, and a high dielectric-constant gate oxide, is explored as a nanoscale device. Experimental functionality of a large scale prototype (5 μm channel length) has been demonstrated. The underlying physics of the device is analyzed and modeled using a time-dependent Hartree approach. Timing estimates suggest a relatively short switching time. |
| Databáze: | OpenAIRE |
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