On the subthreshold measurements of SIC MOSFETs
| Autor: | I.S. Al-Kofahi |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Range (particle radiation)
Materials science Condensed matter physics business.industry Subthreshold conduction Electrical engineering Wide-bandgap semiconductor Electron Subthreshold slope Temperature measurement Condensed Matter::Materials Science chemistry.chemical_compound chemistry MOSFET Silicon carbide business |
| Zdroj: | 2008 IEEE International Conference on Semiconductor Electronics. |
| DOI: | 10.1109/smelec.2008.4770363 |
| Popis: | Reported here are subthreshold measurements on n-channel 6H-SiC MOSFETs over a range of temperatures. A simple theoretical model is presented to explain their general form. It is shown that the temperature dependence of the subthreshold current indicates a high density of electronic states at or near the SiC-SiO2 interface. These states are negatively charged when occupied (acceptor-like), and emit their trapped electrons at elevated temperatures. They are believed to be responsible for the observed shift in the subthreshold characteristics at higher temperatures. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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