Multi-Probe Electrical Characterization of Nanowires for Solar Energy Conversion
| Autor: | Peter Kleinschmidt, Thomas Hannappel, Matthias Steidl, Cornelia Timm, Andreas Nägelein |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Dopant business.industry Doping Nanowire 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Characterization (materials science) law.invention Gallium arsenide chemistry.chemical_compound chemistry law 0103 physical sciences Optoelectronics Electrical and Electronic Engineering Scanning tunneling microscope 0210 nano-technology business Image resolution Diode |
| Zdroj: | IEEE Journal of Photovoltaics. 9:673-678 |
| ISSN: | 2156-3403 2156-3381 |
| DOI: | 10.1109/jphotov.2019.2894065 |
| Popis: | Catalysis-assisted vapor–liquid–solid nanowire (NW) growth offers opportunities to prepare versatile, axial, and radial III–V homo- and hetero-structures, which combine multiple scientific and economic benefits including applications in innovative solar energy conversion. For an essential and suitable optoelectronic analysis of NW heterocontacts, we have established a sophisticated multi-tip scanning tunneling microscope (STM) used as a four-point prober, which is in vacuo combined with state-of-the-art preparation, enabling an individual characterization of free-standing NWs with no contamination after preparation and with highest spatial resolution. We apply the superior capabilities of the ultra-high-vacuum-based multi-tip STM to perform an in-depth study of gallium arsenide NW structures, incorporating an axial p-n junction. Two- and four-point I–V characteristics of the diode are recorded non-destructively, enabling the determination of a local ideality factor. Four-point-probe measurements at different NW positions result in an axial resistance profile, allowing the calculation of the doping concentration of p- and n-doped parts. Around the p-n junction, a 500-nm-width region of low conductance was detected, indicating a compensation effect of dopants during growth. By recording electron-beam-induced current images, the position of the charge separating contact was confirmed. |
| Databáze: | OpenAIRE |
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