Organic thin films on silicon in making a rectifying junction
| Autor: | V. K. Jain, C.L. Gupta, Amita Gupta, T.R. Parashar |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Anthracene
Silicon business.industry Metals and Alloys chemistry.chemical_element Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Optics Semiconductor chemistry Rectification Materials Chemistry Breakdown voltage Optoelectronics Thin film business Diode |
| Zdroj: | Thin Solid Films. 230:45-47 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(93)90345-p |
| Popis: | Diodes were made by making a thin film of anthracene on p-type silicon. Efforts have been made to understand the role of organic thin film in these diodes. It was found that the formation of high barrier height on silicon is possible by using organic/p-type semiconductor structures. This technique also provides a simple method of making diodes with higher and sharp breakdown voltage. Rectification was also seen using these diodes. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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