Interface diffusion characteristics of Al–2at.%Nd/n+a-Si:H and Al–2at.%Nd/n+poly-Si bilayers
| Autor: | Soo Young Yoon, Nack-Bong Choi, Miltiadis K. Hatalis, Chang-Dong Kim |
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| Rok vydání: | 2012 |
| Předmět: |
Amorphous silicon
Auger electron spectroscopy Materials science Diffusion barrier Annealing (metallurgy) Metals and Alloys Analytical chemistry Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials Atomic diffusion chemistry.chemical_compound chemistry X-ray photoelectron spectroscopy Thin-film transistor Electrode Materials Chemistry |
| Zdroj: | Thin Solid Films. 520:1982-1987 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2011.08.070 |
| Popis: | In order to use Al–2 at.%Nd as the source-drain electrode of hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) without diffusion barrier, the diffusion characteristics of Al–2 at.%Nd into phosphorus-doped (n+) a-Si:H were studied, and diffusion between Al–2 at.%Nd and phosphorous-doped poly-Si (n + poly-Si) was also investigated for comparison. The electric resistance variation of Al–2 at.%Nd, n + a-Si:H, and n + poly-Si was measured by four-point probe method at every annealing step, and each surface was inspected by optical microscope. Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy were used to analyze atomic diffusion progress with the variation of annealing temperature. Through these analyses, we ascertain that the Nd element of Al–2 at.%Nd hinders the diffusion between Al and Si, and n + a-Si:H is stable up to 300 °C and n + poly-Si is stable up to 400 °C against the diffusion of Al–2 at.%Nd. Thus Al–2 at.%Nd can be utilized as the source-drain electrode of a-Si:H TFTs below 300 °C and poly-Si TFTs below 400 °C without diffusion barrier. |
| Databáze: | OpenAIRE |
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