| Autor: |
H. Ohta, Y. Kim, Y. Shimamune, T. Sakuma, A. Hatada, A. Katakami, T. Soeda, K. Kawamura, H. Kokura, H. Morioka, T. Watanabe, J. Oh, Y. Hayami, J. Ogura, M. Tajima, T. Mori, N. Tamura, M. Kojima, K. Hashimoto |
| Rok vydání: |
2006 |
| Předmět: |
|
| Zdroj: |
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.. |
| DOI: |
10.1109/iedm.2005.1609316 |
| Popis: |
Aggressively scaled 30 nm gate CMOSFETs for 45 nm node is reported. We successfully improved the short channel effect with keeping a high drive current by Sigma shaped SiGe-source/drain (SiGe-SD) structure. Both hole mobility and source/drain extension (SDE) resistance in pMOSFET are improved by combination of optimized Sigma shaped SiGe-SD and slit-embedded B-doped SiGe-SDE. Electron and hole mobility enhancement can be balanced by aggressively scaled poly-Si pMOS gate height and SiN capped shallow trench isolation (STI) with SiN liner. A high performance 30 nm/33 nm gate nMOSFET and pMOSFET were demonstrated with a drive currents of 937/1000 muA/mum and 490/545 muA/mum at Vd=1.0 V / Ioff=100 nA/mum, respectively |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
