Finely tunable laser based on a bulk silicon wafer for gas sensing applications

Autor: Jose L. Cruz, Everardo Vargas-Rodriguez, E. Gallegos-Arellano, R. K. Raja-Ibrahim, A. D. Guzman-Chavez, M. Cano-Contreras
Rok vydání: 2016
Předmět:
Zdroj: Laser Physics Letters. 13:065102
ISSN: 1612-202X
1612-2011
DOI: 10.1088/1612-2011/13/6/065102
Popis: In this work a very simple continuously tunable laser based on an erbium ring cavity and a silicon wafer is presented. This laser can be tuned with very fine steps, which is a compulsory characteristic for gas sensing applications. Moreover the laser is free of mode hopping within a spectral range sufficiently wide to match one of the ro-vibrational lines of a target molecule. Here the proposed laser reached, at ∼1530 nm, a continuous tuning range of around 950 pm (>100 GHz) before mode hopping occurred, when a silicon wafer of 355 μm thickness was used. Additionally, the laser can be finely tuned with small tuning steps of
Databáze: OpenAIRE