Optically‐pumped lasing of semi‐polar InGaN/GaN(1122) heterostructures

Autor: Christopher L. Chua, Alexander Syrkin, Vladimir Ivantsov, Philippe Spiberg, Alexander Usikov, André Strittmatter, Lisa Shapovalov, Mark Teepe, Robert G. W. Brown, Z. Yang, N. M. Johnson, John E. Northrup
Rok vydání: 2010
Předmět:
Zdroj: physica status solidi c. 7:1814-1816
ISSN: 1610-1642
1862-6351
DOI: 10.1002/pssc.200983557
Popis: Results for long-wavelength emitters are presented for semi-polar InGaN/AlGaN/GaN heterostructures grown on GaN(11-22)/m-sapphire templates by metalorganic chemical vapor deposition. The semi-polar GaN layers were 10 to 25 μm thick and grown by HVPE on sapphire substrates. X-ray diffraction measurements indicate high crystallographic quality that approaches that of GaN(0001) layers on sapphire. Growth studies on the semi-polar GaN templates established the high efficiency of indium incorporation into InGaN layers, with a wide growth-temperature window up to 800°C for green light emitting structures. Basic LEDs were fabricated with peak emission up to 527 nm wavelength. Further growth studies established conditions for growing reasonably smooth, undoped InGaN/GaN laser heterostructures suitable for optical pumping. Optically-pumped lasing was achieved at wavelengths from 400 nm up to 500 nm. The results demonstrate the viability of semi-polar GaN(11-22) on sapphire templates for long-wavelength nitride laser diodes (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze: OpenAIRE
Externí odkaz: