Characterization of unintentional doping in localized epitaxial GaN layers on Si wafers by scanning spreading resistance microscopy

Autor:	Thomas Kaltsounis, Helge Haas, Matthieu Lafossas, Simona Torrengo, Vishwajeet Maurya, Julien Buckley, Denis Mariolle, Marc Veillerot, Alain Gueugnot, Laurent Mendizabal, Yvon Cordier, Matthew Charles
Rok vydání:	2023
Předmět:	Electrical and Electronic Engineering Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	Microelectronic Engineering. 273:111964
ISSN:	0167-9317
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7ac69f37f368818fdd2aad906e15d3e1 https://doi.org/10.1016/j.mee.2023.111964 Zobrazit plný text záznamu Full Text from ScienceDirect