Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium
| Autor: | Alexander N. Smirnov, Joerg Pezoldt, Bernd Hähnlein, Sergey P. Lebedev, Marina G. Mynbaeva, V. Yu. Davydov, V. S. Levitskii, A. A. Lebedev, I. A. Eliseyev, M. M. Kulagina |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Surface (mathematics) Materials science Argon Physics and Astronomy (miscellaneous) Hydrogen Graphene Analytical chemistry chemistry.chemical_element 02 engineering and technology Electron 021001 nanoscience & nanotechnology 01 natural sciences Intrinsic conductivity law.invention chemistry law 0103 physical sciences 0210 nano-technology Layer (electronics) |
| Zdroj: | Technical Physics Letters. 43:849-852 |
| ISSN: | 1090-6533 1063-7850 |
| Popis: | We present the results of investigations of the transport properties of graphene films obtained by thermodestruction of a 4H-SiC (0001) surface in argon. The charge-carrier concentration in the graphene layer was within 7 × 1011–1 × 1012 cm–2, and the maximum mobility of electrons approached 6000 cm2/(V · s). The achieved parameters of mobility are close to theoretical values calculated for graphene films with intrinsic conductivity on the Si face of SiC at Т = 300 К in the absence of intercalated hydrogen. |
| Databáze: | OpenAIRE |
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