Next generation ferrite material for SiC & GaN applications

Autor:	Michael Schmidhuber, Michael Baumann, Herbert Jungwirth
Rok vydání:	2017
Předmět:	Electronic assemblies Materials science Choke Gallium nitride Engineering physics law.invention chemistry.chemical_compound chemistry law Power electronics Electronic engineering Silicon carbide Miniaturization Power semiconductor device Transformer
Zdroj:	2017 IEEE Applied Power Electronics Conference and Exposition (APEC).
Popis:	This paper presents a new ferrite material for future power electronics at very high frequency applications. The rapid progress in Gallium Nitride (GaN) and Silicon Carbide (SiC) power semiconductors will lead to a further miniaturization of power electronic assemblies and subsystems. Inductive components have a significant impact here. The drastically increased frequency requires improved ferrite materials with lowest losses and transformer or choke designs with unique construction technologies. The paper describes the final development status of this improved and thus novel ferrite material for high frequency applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7ab7793cf706adeb3c1e3689f15b6cf5 https://doi.org/10.1109/apec.2017.7930801 Zobrazit plný text záznamu