Influence of deposition conditions on electrical and mechanical properties of Sm2O3 doped CeO2 thin films prepared by EB-PVD (+IBAD) methods part 2. Indentation hardness and effective elastic modulus

Autor: M. Hartmanová, Vladislav Navrátil, C. Mansilla, Vilma Buršíková
Rok vydání: 2013
Předmět:
Zdroj: Russian Journal of Electrochemistry. 49:619-627
ISSN: 1608-3342
1023-1935
DOI: 10.1134/s1023193513070033
Popis: The study of polycrystalline CeO2 + xSm2O3 (x = 0, 10.9–15.9 mol %) thin films deposited by Electron Beam Physical Vapour Deposition (EB-PVD) and Ionic Beam Assisted Deposition (IBAD) techniques on the Si substrate was devoted to the influence of deposition conditions used, namely composition x, deposition temperature T dep and Ar+ ion bombardment, on the (micro)hardness, H pl and elastic modulus, Y with respect to the film structure and microstructure. These mechanical characteristics were investigated by the depth sensing indentation (DSI) technique as the functions of relative indentation depth h rel = h max/t and the values obtained were compared with those obtained by the classical Vickers technique. Results of this study are described and discussed.
Databáze: OpenAIRE
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