Effects of BF2+-Implanted Polysilicon Structures on the Reliability of Gate Oxides

Autor:	H.P. Su, S.M. Lin, Huang-Chung Cheng
Rok vydání:	1993
Předmět:	Materials science Annealing (metallurgy) business.industry Polysilicon depletion effect Electrode Electronic engineering Optoelectronics Dielectric Rapid thermal annealing business Polysilicon gate Ion
DOI:	10.1016/b978-0-444-89994-1.50140-x
Popis:	Dielectric reliabilities of BF 2 + -implanted poly-Si gates has been studied. BF 2 + ions at different energies were implanted into polysilicon films to different doses. The effects of implantation conditions, annealing temperatures, and annealing schemes of rapid thermal annealing (RTA) and conventional furnace annealing (CFA) of polysilicon gate electrodes on the dielectric characteristics of the gate oxides were investigated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7ab0dad71dcc9f09107164787c2e0b1d https://doi.org/10.1016/b978-0-444-89994-1.50140-x Zobrazit plný text záznamu