A chip-level oven-controlled system used to improve accuracy of silicon piezoresistive pressure sensor
| Autor: | Liu Zhenyu, Zhen Fang, Zhan Zhao, Jihang Liu, Pang Wu, Lidong Du |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Microelectromechanical systems
Materials science Temperature control Silicon business.industry Applied Mathematics Multiphysics 020208 electrical & electronic engineering 010401 analytical chemistry chemistry.chemical_element 02 engineering and technology Condensed Matter Physics Chip 01 natural sciences Piezoresistive effect Pressure sensor 0104 chemical sciences chemistry 0202 electrical engineering electronic engineering information engineering Optoelectronics Electrical and Electronic Engineering business Instrumentation Temperature coefficient |
| Zdroj: | Measurement. 143:1-10 |
| ISSN: | 0263-2241 |
| DOI: | 10.1016/j.measurement.2019.05.014 |
| Popis: | High precision is an important indicator for the silicon piezoresistive pressure sensor, which is deeply affected by the ambient temperature. This paper presented a chip-level oven-controlled system to operate the silicon piezoresistive pressure sensor at a constant temperature. However, the changes in ambient temperature still affect the temperature of the silicon piezoresistive pressure sensor due to the non-coplanar temperature control and the direct heat transfer between the piezoresistance on the surface of the pressure sensor and the environment. In order to decrease the effects and further improve the accuracy of the silicon piezoresistive sensor, a compensation function was introduced in the designed system. In addition, the oven-controlled structure fabricated by the MEMS process and the silicon piezoresistive pressure sensor were implemented at the chip level, which further reduced power consumption. The feasibility of the design was verified by the results of the thermodynamic model and COMSOL Multiphysics simulation analysis. Test results showed that when the pressure ranged from 100 hPa to 1100 hPa, the designed system performed a maximum measurement error no more than ±0.2 hPa from −45 °C to 45 °C. After compensation, the accuracy, sensitivity temperature coefficient, offset temperature coefficient of the silicon piezoresistive pressure sensor can reach 0.02% FS, 1.081 × 10−5/°C, 2.22 × 10−4% FS/°C respectively. |
| Databáze: | OpenAIRE |
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