Solution-processed and low-temperature metal oxide n-channel thin-film transistors and low-voltage complementary circuitry on large-area flexible polyimide foil

Autor: Paul Heremans, Silviu Botnaras, Jan Genoe, Soeren Steudel, Dennis Weber, Kris Myny, Sarah Schols, Duy-Vu Pham, Jan Vanfleteren, Maarten Rockele, Dieter Cuypers, Tom Sterken, Juergen Steiger, Bas van der Putten
Rok vydání: 2012
Předmět:
Zdroj: Journal of the Society for Information Display. 20:499-507
ISSN: 1071-0922
DOI: 10.1002/jsid.114
Popis: High-performance solution-based n-type metal oxide thin-film transistors (TFTs), fabricated directly on polyimide foil at a post-annealing temperature of only 250''C, are realized and reported. Saturation mobilities exceeding 2cmV(Vs) and on-to-off current ratios up to 10^ are achieved. The usage of these oxide n-type TFTs as the pixel drive and select transistors In future flexible activematrix organic light-emitting diode (AMOLED) displays is proposed. With these oxide n-type TFTs, fast and low-voltage n-type only flexible circuitry is demonstrated. Furthermore, a complete 8-bit radiofrequency identification transponder chip on foil has been fabricated and measured, to prove that these oxide n-type TFTs have reached already a high level of yield and reliability. The integration of the same solution-based oxide n-type TFTs with organic p-type TFTs into hybrid complementary circuitry on polyimide foil is demonstrated. A comparison between both the n-type only and complementary elementary circuitry shows the high potential of this hybrid complementary technology for future line-drive circuitry embedded at the borders of flexible AMOLED displays.
Databáze: OpenAIRE