Screen printed, large area bifacial N-type back junction silicon solar cells with selective phosphorus front surface field and boron doped poly-Si/SiOx passivated rear emitter
| Autor: | Arnab Das, Andrew M. Tam, Ying-Yuan Huang, Vijay Yelundur, Aditi Jain, Adam M. Payne, Young-Woo Ok, Ajeet Rohatgi, Ajay Upadhyaya, Vinodh Chandrasekaran |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Passivation Silicon business.industry Doping chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Ion implantation chemistry Saturation current 0103 physical sciences Optoelectronics 0210 nano-technology business Boron Current density Common emitter |
| Zdroj: | Applied Physics Letters. 113:263901 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.5059559 |
| Popis: | This paper reports on the effect of screen printed metallization on the passivation quality of a boron doped poly-Si/SiOx passivated contact (PC) structure composed of a very thin Si oxide (∼15 A) capped with boron doped poly-Si. Our boron doped poly-Si/SiOx passivated contact (p-Poly Si/SiOx PC) with a SiNx capping layer gave excellent surface passivation with a very low saturation current density of ∼5 fA/cm2. After screen printed metallization on poly-Si with a metal coverage of ∼10%, this value increased to ∼17 fA/cm2. This paper also demonstrates the fabrication of screen printed, large area (239 cm2), high efficiency (∼21%) n-base bifacial back junction Si solar cells with p-Poly-Si/SiOx PC on the rear and a phosphorus implanted n++-n+ selective front surface field. Detailed analysis is performed to quantify recombination and extract the saturation current density contributions (J0) from each layer of the cell including the metallized front surface field and the tunnel oxide passivated contact. Finally, 2D device modeling of this back junction cell is performed by implementing a simple approach which replaces the p-Poly-Si/SiOx PC by an equivalent p-n junction with the same J0 and gives a good match between the measured and simulated cell parameters using the extracted J0 and recombination velocity values. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|