An improved temperature dependent analytical model to predict AlGaN/GaN high electron mobility transistors AC characteristics

Autor:	Mohammad N. Khan, Muhammad Mansoor Ahmed, Saif Rehman, U. F. Ahmed
Rok vydání:	2019
Předmět:	Materials science business.industry law Modeling and Simulation Transistor Optoelectronics Algan gan Electrical and Electronic Engineering business High electron Self heating Computer Science Applications law.invention
Zdroj:	International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 32
ISSN:	1099-1204 0894-3370
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7a92ea148064ac7d47fbfdaf0ba8010e https://doi.org/10.1002/jnm.2648 Zobrazit plný text záznamu Plný text