Oxidation Reduction in Nanocrystalline Silicon Grown by Hydrogen-Profiling Technique
| Autor: | T.F.G. Muller, Christopher J. Arendse, C.J. Oliphant, Franscious Cummings |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Amorphous silicon Thermal oxidation Materials science Silicon Hydrogen technology industry and agriculture Analytical chemistry Nanocrystalline silicon chemistry.chemical_element 02 engineering and technology Chemical vapor deposition Substrate (electronics) 021001 nanoscience & nanotechnology 01 natural sciences chemistry.chemical_compound chemistry 0103 physical sciences Thin film 0210 nano-technology |
| Zdroj: | Journal of Nano Research. 41:9-17 |
| ISSN: | 1661-9897 |
| DOI: | 10.4028/www.scientific.net/jnanor.41.9 |
| Popis: | The deposition of a compact amorphous silicon/nano-crystalline silicon material is demonstrated by hot-wire chemical vapour deposition using a sequential hydrogen profiling technique at low hydrogen dilutions. Nano-crystallite nucleation occurs at the substrate interface that develops into a uniform, porous crystalline structure as the growth progresses. A further reduction in the H-dilution results in the onset of a dense amorphous silicon layer. The average crystalline volume fraction and nano-crystallite size in the sample bulk amounts to 30% and 6 nm, respectively, as probed by Raman spectroscopy using the 647 nm excitation. The change in hydrogen dilution is accompanied by a graded hydrogen concentration depth-profile, where the hydrogen concentration decreases as the growth progresses. The level of post-deposition oxidation is considerably reduced, as inferred from infrared spectroscopy. The presence of oxygen is mainly confined to the substrate interface as a result of thermal oxidation during thin film growth. |
| Databáze: | OpenAIRE |
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