In-situ thickness measurement of MOVPE grown GaAs GaAlAs by laser reflectometry
| Autor: | Y. Raffle, R. Kuszelewicz, L. Dugrand, J. C. Michel, R. Azoulay, E. Toussaere, G. Le Roux |
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| Rok vydání: | 1994 |
| Předmět: |
Reproducibility
business.industry Phase (waves) Binary compound Condensed Matter Physics Epitaxy Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Wavelength chemistry.chemical_compound Optics chemistry Ternary compound Metalorganic vapour phase epitaxy Electrical and Electronic Engineering Reflectometry business |
| Zdroj: | Microelectronic Engineering. 25:229-234 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(94)90020-5 |
| Popis: | In-situ laser reflectometry was used at four different test wavelengths to monitor the thickness of GaAs/GaAlAs layers grown by metal organic vapor phase epitaxy. The studied wavelengths are 1.32 μm, 633 nm, 514 nm, and 442 nm. The effective optical indices have been calibrated at the growth temperature for different compositions of GaAlAs. According to these measured indices and under the requirements of an empirical thickness criterion, the range of in-situ thickness monitoring has been determined at the different wavelengths for each studied materials. Finally, as a demonstration, in-situ laser reflectometry has been successfully applied to the growth of some devices, showing a significative improvement of the reproducibility and the accurancy of the caracteristics of these devices. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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