GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

Autor:	K.K. Ng, Peide D. Ye, Joseph Petrus Mannaerts, M.R. Frei, H.-J.L. Gossmann, S.N.G. Chu, M. Sergent, Minghwei Hong, J. Kwo, G. D. Wilk, J. Bude, B. Yang
Rok vydání:	2003
Předmět:	Materials science Passivation business.industry Transconductance Gate dielectric Electrical engineering Chemical vapor deposition Electronic Optical and Magnetic Materials Atomic layer deposition Gate oxide MOSFET Optoelectronics Electrical and Electronic Engineering business High-κ dielectric
Zdroj:	IEEE Electron Device Letters. 24:209-211
ISSN:	1558-0563 0741-3106
Popis:	For the first time, a III-V compound semiconductor MOSFET with the gate dielectric grown by atomic layer deposition (ALD) is demonstrated. The novel application of the ALD process on III-V compound semiconductors affords tremendous functionality and opportunity by enabling the formation of high-quality gate oxides and passivation layers on III-V compound semiconductor devices. A 0.65-/spl mu/m gate-length depletion-mode n-channel GaAs MOSFET with an Al/sub 2/O/sub 3/ gate oxide thickness of 160 /spl Aring/ shows a gate leakage current density less than 10/sup -4/ A/cm/sup 2/ and a maximum transconductance of 130 mS/mm, with negligible drain current drift and hysteresis. A short-circuit current-gain cut-off frequency f/sub T/ of 14.0 GHz and a maximum oscillation frequency f/sub max/ of 25.2 GHz have been achieved from a 0.65-/spl mu/m gate-length device.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7a7dbd8ace721865f2ff0bbb9e2d6768 https://doi.org/10.1109/led.2003.812144 Zobrazit plný text záznamu