Wet Chemical Etching of Antimonide-Based Infrared Materials

Autor:	Wei Sihang, Liao Yongping, Ren Zheng-Wei, Han Xi, Xiang Wei, HE Zhen-Hong, Niu Zhi-Chuan, Wang Guo-Wei, Hao Hong-Yue, Xu Yingqiang
Rok vydání:	2015
Předmět:	Materials science business.industry Etching (microfabrication) Superlattice Antimonide General Physics and Astronomy Optoelectronics Dry etching Surface finish Reactive-ion etching business Isotropic etching Dark current
Zdroj:	Chinese Physics Letters. 32:107302
ISSN:	1741-3540 0256-307X
DOI:	10.1088/0256-307x/32/10/107302
Popis:	The roughness and the crystallographic orientation selectivity of etched antimonide-based infrared materials are examined and are used to optimize the chemical mesa etching process of the InAs/GaSb superlattice photodiode with the goal of reducing the dark current. The etchant used is based on phosphoric acid (H3PO4), citric acid (C6H8O7) and hydrogen peroxide (H2O2). The roughness of the mesa sidewalls and etching rates are compared and used to find an optimized etchant, with which we obtain optimized mid-wavelength infrared photodiodes possessing an R0A value of 466 ωcm2 and a detectivity of 1.43 × 1011 cmHz1/2 W−1. Crystallographic orientation selectivity is seen in InAs etching, and also is seen in the InAs/GaSb superlattice wet chemical etching process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7a7c579938c72676be51a227ce277a19 https://doi.org/10.1088/0256-307x/32/10/107302 Zobrazit plný text záznamu