The effect of the memristor electrode material on its resistance to degradation under conditions of cyclic switching
Autor: | N. E. Maslova, Yu. V. Khrapovitskaya, Vyacheslav A. Demin, M. L. Zanaveskin, Yu. V. Grishchenko |
---|---|
Rok vydání: | 2014 |
Předmět: | |
Zdroj: | Technical Physics Letters. 40:317-319 |
ISSN: | 1090-6533 1063-7850 |
DOI: | 10.1134/s1063785014040051 |
Popis: | The stability of titanium oxide memristors with gold and platinum electrodes with respect to switching-induced degradation has been studied. It is established that the use of gold instead of platinum as the electrode material significantly increases the resistance of a memristor to degradation in the course of repeated resistance read-write(erase) cycles. The first Russian high-endurance memristor based on titanium oxide has been obtained, which can withstand up to 3000 resistive switching cycles. |
Databáze: | OpenAIRE |
Externí odkaz: |