Extreme Ultraviolet Lithography Capabilities at the Advanced Light Source Using a 0.3-NA Optic
| Autor: | Kenneth A. Goldberg, P.E. Denham, Kim Dean, Keith H. Jackson, Patrick P. Naulleau, Brian Hoef, Jason P. Cain, E. H. Anderson |
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| Rok vydání: | 2006 |
| Předmět: |
Computer science
business.industry Aperture Extreme ultraviolet lithography Particle accelerator Condensed Matter Physics Atomic and Molecular Physics and Optics Numerical aperture law.invention Optics Resist Nanoelectronics law Node (circuits) Electrical and Electronic Engineering business Lithography |
| Zdroj: | IEEE Journal of Quantum Electronics. 42:44-50 |
| ISSN: | 0018-9197 |
| Popis: | Extreme ultraviolet lithography is a leading candidate for volume production of nanoelectronics at the 32-nm node and beyond. In order to ensure adequate maturity of the technology by the start date for the 32-nm node, advanced development tools are required today with numerical apertures of 0.25 or larger. In order to meet these development needs, a microexposure tool based on SEMATECH's 0.3-numerical aperture microfield optic has been developed and implemented at Lawrence Berkeley National Laboratory, Berkeley, CA. Here we describe the Berkeley exposure tool in detail, discuss its characterization, and summarize printing results obtained over the past year. Limited by the availability of ultrahigh resolution chemically amplified resists, present resolving capabilities limits are approximately 32 nm for equal lines and spaces and 28 nm for semi-isolated lines. |
| Databáze: | OpenAIRE |
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