Energy-Band-Engineered Unified-RAM (URAM) Cell on Buried $\hbox{Si}_{1 - y}\hbox{C}_{y}$ Substrate for Multifunctioning Flash Memory and 1T-DRAM
| Autor: | Jae-Hyuk Ahn, Gi-Sung Lee, Chung-Jin Kim, Dong-Hyun Kim, Jae-Sub Oh, Kwang Hee Kim, Seong-Wan Ryu, Kyu Jin Choi, Yang-Kyu Choi, Yun Chang Park, Byung Jin Cho, Jin-Woo Han, Sung-Jin Choi, Myeong-Ho Song, Jeoung Woo Kim, Sungho Kim, Jin-Soo Kim |
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| Rok vydání: | 2009 |
| Předmět: |
Dynamic random-access memory
Materials science business.industry Gate dielectric Electrical engineering Wide-bandgap semiconductor Band offset Flash memory Electronic Optical and Magnetic Materials Threshold voltage law.invention Non-volatile memory law MOSFET Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 56:641-647 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/ted.2009.2014197 |
| Popis: | A band-offset-based unified-RAM (URAM) cell fabricated on a Si/Si1-yCy substrate is presented for the fusion of a nonvolatile memory (NVM) and a capacitorless 1T-DRAM. An oxide/nitride/oxide (O/N/O) gate dielectric and a floating-body are combined in a FinFET structure to perform URAM operation in a single transistor. The O/N/O layer is utilized as a charge trap layer for NVM, and the floating-body is used as an excess hole storage node for capacitorless 1T-DRAM. The introduction of a pseudomorphic SiC-based heteroepitaxial layer into the Si substrate provides band offset in a valence band. The FinFET fabricated on the energy-band-engineered Si1-yCy substrate allows hole accumulation in the channel for 1T-DRAM. The band-engineered URAM yields a cost-effective process that is compatible with a conventional body-tied FinFET SONOS. The fabricated URAM shows highly reliable NVM and high-speed 1T-DRAM operations in a single memory cell. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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