Structural and Dielectric Properties of Cubic Fluorite Bi[sub 3]NbO[sub 7] Thin Films As-Deposited at 298 K by PLD for Embedded Capacitor Applications
| Autor: | Jin-Seok Moon, Jong-Hyun Park, Seung Eun Lee, Seung-Hyun Sohn, Jeong-Won Lee, Yul-Kyo Chung, Hyun-Ju Jin, Woon-Chun Kim, Sung-Taek Lim, Hyung-Dong Kang, Hyung-Mi Jung, Soon-Gil Yoon |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Renewable Energy Sustainability and the Environment Analytical chemistry Dielectric Condensed Matter Physics Decoupling capacitor Fluorite Surfaces Coatings and Films Electronic Optical and Magnetic Materials Pulsed laser deposition Amorphous solid law.invention Capacitor law Materials Chemistry Electrochemistry Dielectric loss Thin film |
| Zdroj: | Journal of The Electrochemical Society. 153:F225 |
| ISSN: | 0013-4651 |
| DOI: | 10.1149/1.2239151 |
| Popis: | Cubic fluorite Bi 3 NbO 7 (BNO) thin films were deposited on Cu/polymer and Cu/Si(001) substrates at 298 K by pulsed laser deposition (PLD) for embedded decoupling capacitor applications. The BNO films deposited at 298 K exhibit an amorphous structure and do not show a thickness dependence of a dielectric constant. The 200 nm thick BNO films exhibit a root-mean-square roughness of 0.7 nm, a dielectric constant of 47, a dielectric loss of 0.6% at 1 MHz, and a leakage current density of approximately 1 X 10 -8 A/cm 2 at 5 V. They show a breakdown strength of about 0.25 MV/cm. The 200 nm thick BNO films deposited at 298 K are suitable for embedded decoupling capacitor applications directly on a printed circuit board. |
| Databáze: | OpenAIRE |
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