| Autor: |
P.C. Chao, J.M. Ballingall, B.R. Lee, M.Y. Kao, K.H.G. Duh, P.M. Smith, Luke F. Lester |
| Rok vydání: |
2003 |
| Předmět: |
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| Zdroj: |
1988., IEEE MTT-S International Microwave Symposium Digest. |
| Popis: |
Short-gate-length high-electron-mobility transistors (HEMTs) are reported that have exhibited state-of-the-art low-noise performance at millimeter-wave frequencies; minimum noise figure of 1.2 dB at 32 GHz and 1.8 dB at 60 GHz from 0.25- mu m HEMTs. At Ka-band, a two-stage low-noise amplifier has demonstrated an average noise figure of 2 dB from 26.5 GHz to 37 GHz with a gain of 17 dB at 32 GHz. At V-band, a two-stage amplifier yielded a noise figure of 3.2 dB at 61 GHz with flat gain 12.7*0.5 dB from 59 GHz to 65 GHz. These devices are described and the potential for their future improvement is discussed. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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