Diffusion parameters for oxygen and gadolinium at gadolinium-metal interfaces
| Autor: | D. Raiser, C. Speisser, J.C. Sens |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Annealing (metallurgy)
Gadolinium Metals and Alloys Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Copper Oxygen Surfaces Coatings and Films Electronic Optical and Magnetic Materials Metal Nickel chemistry visual_art Materials Chemistry visual_art.visual_art_medium Nuclear chemistry |
| Zdroj: | Thin Solid Films. 219:87-91 |
| ISSN: | 0040-6090 |
| Popis: | Rutherford backscattering analysis of the interface of thin gadolinium films deposited on nickel, copper and silver without annealing and annealed at 200°C has allowed determination of the diffusion coefficients of oxygen in gadolinium and of gadolinium in metals. From these values, activation energies Q and frequency factors D0 have been extracted. The results obtained for the diffusion of oxygen in gadolinium are Q = 0.48±0.02 eVatom−1 and D0 = (0.58±0.31) × 10−8cm2s−1. At higher temperature, the interdiffusion of Gd + O in copper gives Q = 0.70±0.21 eV atom−1 and D0 = (0.12±0.02) × 10−10cm2s−1. |
| Databáze: | OpenAIRE |
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