| Popis: |
The kinetics of monocrystalline Si deposition on slightly misoriented {111}Si substrates from SiH4 diluted in H2 at reduced pressures is theoretically analysed in terms of a condensation process of Si atoms and SiH4 molecules, taking surface diffusion into account. The possibility of a homogeneous nucleation is considered by applying the classical homogeneous nucleation theory to published experimental results. A growth mechanism limited by diffusion of SiH4 molecules on a surface inhibited by H adsorption is in agreement with the growth rates of monocrystalline Si observed at reduced pressures, when the heated substrate has a surface that is not too large. A condensation of SiH4 molecules explains the homogeneous nucleation. |
