Multiple negative-differential-resistance (MNDR) phenomena of a metal-insulator-semiconductor-insulator-metal (MISIM)-like structure with step-compositioned In/sub x/Ga/sub 1-x/As quantum wells
| Autor: | Jing-Yuh Chen, Wen-Chau Liu, Shiou-Ying Cheng, Wei-Chou Wang, Lih-Wen Laih, Wen-Lung Chang, Po-Hung Lin |
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| Rok vydání: | 1998 |
| Předmět: |
Materials science
business.industry Insulator (electricity) Electronic Optical and Magnetic Materials Gallium arsenide Metal chemistry.chemical_compound Semiconductor chemistry visual_art visual_art.visual_art_medium Semiconductor quantum wells Optoelectronics Electrical and Electronic Engineering business Quantum well |
| Zdroj: | IEEE Transactions on Electron Devices. 45:373-379 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.658669 |
| Popis: | In this paper, a new multiple negative-differential-resistance (MNDR) device based on a metal-insulator-semiconductor-insulator-metal (MISIM)-like structure with step-compositional In/sub x/Ga/sub 1-x/As quantum wells has been fabricated and demonstrated. The interesting MNDR phenomena are found in the current-voltage (I-V) characteristics of this device. At room temperature, the triple switching behaviours and quadruple stable operation states are obtained. In addition, the sixfold switching behaviors and a staircase-shaped I-V characteristic are observed at -105/spl deg/C. A sequential carrier accumulation at InGaAs subwells and the potential lowering process are used to qualitatively explain the interesting MNDR phenomena. From the experimental results, it is shown that the studied device has good potential in multiple-valued logic applications. |
| Databáze: | OpenAIRE |
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