Theoretical study of the temperature dependence of 1.3-μm AlGaInAs-InP multiple-quantum-well lasers
| Autor: | Jen-Wei Pan, Jen-Inn Chyi |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Materials science
Differential gain business.industry Condensed Matter Physics Laser Atomic and Molecular Physics and Optics Gallium arsenide Semiconductor laser theory Auger law.invention chemistry.chemical_compound chemistry law Optoelectronics Spontaneous emission Electrical and Electronic Engineering Atomic physics business Current density Sensitivity (electronics) |
| Zdroj: | IEEE Journal of Quantum Electronics. 32:2133-2138 |
| ISSN: | 0018-9197 |
| DOI: | 10.1109/3.544760 |
| Popis: | The temperature dependence of the differential gain, carrier density, and transparency current density for 1.3-/spl mu/m AlGaInAs-InP multiple-quantum-well lasers has been theoretically studied using the optical gain calculation from 250-380 K. The characteristic temperatures of the carrier density and differential gain at threshold are calculated to be 254 and 206 K, respectively. The Auger current density accounts for more than 50% of the total current density. The leakage current density exhibits the highest temperature sensitivity and becomes an essential part of the total current density at a high temperature. The calculated characteristic temperatures of the transparency and threshold current densities are 106 and 84 K, respectively, which agree well with the reported experimental results. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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