XRD and TEM study of heteroepitaxial growth of zirconia on magnesia single crystal
| Autor: | Bernard Soulestin, A. Dauger, René Guinebretière |
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| Rok vydání: | 1998 |
| Předmět: |
Materials science
Annealing (metallurgy) Metals and Alloys Mineralogy Surfaces and Interfaces Thermal treatment Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention law Materials Chemistry Cubic zirconia Crystallite Crystallization Thin film Composite material Single crystal Sol-gel |
| Zdroj: | Thin Solid Films. 319:197-201 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(97)01121-8 |
| Popis: | Zirconia thin films have been deposited on magnesia (001) single-crystal substrates using a sol–gel precursor route. Thermal treatment at 600°C induces the crystallization of polycrystalline thin films containing randomly oriented nanocrystals. Annealing at higher temperature gives rise to the appearance of a progressive heteroepitaxy and breakup of the film into islands. Polycrystalline tetragonal zirconia thin films, several tens nanometer thick, have been studied with an incident X-ray beam angle equal to several tenth degrees. The epitaxial growth has been characterized by XRD under controlled incidence angles and concurrently imaged by TEM on cross-sectional samples. The development of heteroepitaxied single-crystal islands results from abnormal growth of interfacial grains having a lower orientational free energy. |
| Databáze: | OpenAIRE |
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