The initial adsorption of oxygen on the Si(111)7 × 7 surface at 150 K
Autor: | Fu-Rong Zhu, Yan-Sheng Luo, Ivan Davoli, S. Stizza, Dao-xuan Dai |
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Rok vydání: | 1994 |
Předmět: |
Surface (mathematics)
Silicon Oxygene General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter Physics Oxygen Surfaces Coatings and Films Adsorption chemistry Low exposure Physical chemistry Spectroscopy computer computer.programming_language Surface states |
Zdroj: | Applied Surface Science. 78:293-297 |
ISSN: | 0169-4332 |
Popis: | Energy-loss spectroscopy (ELS) has been used to study the initial adsorption of oxygen on the Si(111)7 × 7 surface at 150 K. Experimental results show that at low exposure of 0.25 L oxygen begins to adsorb on the Si(111)7 × 7 surface. No saturated adsorption can be observed until 5 L. The possible surface transitions from intrinsic surface states on the clean surface and from oxygen-induced surface states on the adsorbed surface are presented. |
Databáze: | OpenAIRE |
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